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Samsung breaks ground for memory chip plant in China

(Xinhua)

08:18, September 13, 2012

SEOUL, Sept. 12 (Xinhua) -- Samsung Electronics, the world's No.1 memory chip maker, said Wednesday that it held a ground- breaking ceremony for a new memory chip plant in Xi'an in western China's Shaanxi province with various eminent people attended.

According to an e-mailed statement, Samsung Electronics Vice Chairman Kwon Oh-hyun hosted the event, which welcomed 600 attendees including government dignitaries such as Zhao Leji, secretary of the Shanxi Provincial Committee of the Communist Party of China (CPC).

Other attendees include Lee Kyu Hyung, ambassador of the Republic of Korea to China, and Yoon Sang-jick, vice minister of South Korea's Ministry of Knowledge Economy.

Chinese Vice Premier Li Keqiang congratulated the event through a personal letter, noting that the project will move the partnership between the two countries forward within the IT field. "It is a great honor to announce our ground-breaking at Xi'an, a city of tremendous historic and academic significance, as we celebrate the 20th anniversary of diplomatic relations between South Korea and China," Vice Chairman Kwon told the ceremony.

The new memory chip fabrication line in Xi'an, once completed, will make use of 10-nanometer-class technology in producing NAND flash memory chips, a critical component powering IT and mobile applications for high-speed and large-density data storage, Samsung said.

The tech firm aimed to achieve the plant's full-fledged operation in 2014, with a phased total investment of 7 billion U.S. dollars, the single largest investment by Samsung in China.

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