|At the Ground-Breaking Ceremony (Photo by Su Jiyu)|
On Sep 12th, five months after signing agreement on April 10th, the high-end storage chip program by Samsung semiconductor (China) Ltd. broke ground at Xi’an High-Tech Industries Development Zone. It is the biggest foreign investment program in the country, with first phase investment of 7 billion dollars. More than 800 people attended the ceremony, including officials from the national ministries, provincial and municipal governments, and relevant departments from Shaanxi and Xi’an, as well as directors from several universities and scientific research institutions in Shaanxi, delegates from Korean government and Samsung managements.
Zhao Zhengyong, deputy secretary of the provincial committee and governor of the provincial government addressed the opening ceremony, and Qi Chengyuan, director of the high-tech department of NDRC, read out a speech from the committee leaders. Both of them gave warm congratulations to Samsung’s ground-breaking. Expectations and hopes about the program’s future development in the High-Tech Zone were expressed from Lee Kyu Hyung, South Korean ambassador to China, Yoon Sang-Jick, the first deputy director of South Korean Ministry of Knowledge Economy, and Kwon Oh-hyun, CEO and vice president of Samsung Electronics.